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| Semiconductor STA124S PNP Silicon Transistor Features * Suitable for low voltage large current drivers * High DC current gain and large current capability * Complementary pair with STD123S Ordering Information Type NO. STA124S Marking 124 Package Code SOT-23 Outline Dimensions 2.40.1 1.300.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 2.90.1 KST-2100-000 0.124 +0.05 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 0~0.1 -0.03 1 STA124S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature * : Package mounted on 99.5% alumina 10x8x0.1mm (Ta=25 C) Symbol VCBO VCEO VEBO IC PC * Ratings -15 -12 -6.5 -1 350 150 -55~150 Unit V V V A mW C C Tj T stg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance (Ta=25 C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE(sat) fT C ob Test Condition IC=-50A, I E =0 IC=-1mA, IB=0 IE =-50A, IC =0 VCB=-15V, I E =0 VEB =-6V, IC =0 VCE=-1V, IC =-100mA IC=-500mA, IB =-50mA VCE=-5V, IC =-50mA VCB=-10V, I E =0, f=1MHz Min. -15 -12 -6.5 200 - Typ. -0.2 260 5 Max. -0.1 -0.1 450 -0.4 - Unit V V V A A V MHz pF KST-2100-000 2 STA124S Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 hFE- IC Fig. 4 VCE(sat)-IC KST-2100-000 3 |
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